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zmm1b...zmm75b silicon epitaxial planar zener diodes in minimelf case especially for automatic insertion. these diodes are also available in do-35 case with the type designation bzx55b... absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t stg - 55 to + 175 o c 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r ja 0.3 1) k/mw forward voltage at i f = 100 ma v f 1 v 1) valid provided that electrodes ar e kept at ambient temperature ll-34
zmm1b...zmm75b characteristics at t a = 25 o c type zener voltage range 1) dynamic resistance reverse leakage current temp coefficient of zener voltage v znom v zt at i zt z zt z zk at i zk t a = 25 o ct a = 125 o c at v r (v) (v) (ma) max. ( ? )max. ( ? ) (ma) max. (a) max. (a) (v) tkvz (%/k) zmm1b 2) 0.75 0.73?0.77 5 8 50 1 - - - -0.26...-0.23 zmm2b0 2 1.96?2.04 5 85 600 1 100 200 1 -0.09...-0.06 zmm2b2 2.2 2.16?2.24 5 85 600 1 75 160 1 -0.09...-0.06 zmm2b4 2.4 2.35?2.45 5 85 600 1 50 100 1 -0.09...-0.06 zmm2b7 2.7 2.65?2.75 5 85 600 1 10 50 1 -0.09...-0.06 zmm3b0 3 2.94?3.06 5 85 600 1 4 40 1 -0.08...-0.05 zmm3b3 3.3 3.23?3.37 5 85 600 1 2 40 1 -0.08...-0.05 zmm3b6 3.6 3.53?3.67 5 85 600 1 2 40 1 -0.08...-0.05 zmm3b9 3.9 3.82?3.98 5 85 600 1 2 40 1 -0.08...-0.05 zmm4b3 4.3 4.21?4.39 5 75 600 1 1 20 1 -0.06...-0.03 zmm4b7 4.7 4.61?4.79 5 60 600 1 0.5 10 1 -0.05...+0.02 zmm5b1 5.1 5?5.2 5 35 550 1 0.1 2 1 -0.02...+0.02 zmm5b6 5.6 5.49?5.71 5 25 450 1 0.1 2 1 -0.05...+0.05 zmm6b2 6.2 6.08?6.32 5 10 200 1 0.1 2 2 0.03...0.06 zmm6b8 6.8 6.66?6.94 5 8 150 1 0.1 2 3 0.03...0.07 zmm7b5 7.5 7.35?7.65 5 7 50 1 0.1 2 5 0.03...0.07 zmm8b2 8.2 8.04?8.36 5 7 50 1 0.1 2 6.2 0.03...0.08 zmm9b1 9.1 8.92?9.28 5 10 50 1 0.1 2 6.8 0.03...0.09 zmm10b 10 9.8?10.2 5 15 70 1 0.1 2 7.5 0.03...0.1 zmm11b 11 10.78?11.22 5 20 70 1 0.1 2 8.2 0.03...0.11 zmm12b 12 11.76?12.24 5 20 90 1 0.1 2 9.1 0.03...0.11 zmm13b 13 12.74?13.26 5 26 110 1 0.1 2 10 0.03...0.11 zmm15b 15 14.7?15.3 5 30 110 1 0.1 2 11 0.03...0.11 zmm16b 16 15.68?16.32 5 40 170 1 0.1 2 12 0.03...0.11 zmm18b 18 17.64?18.36 5 50 170 1 0.1 2 13 0.03...0.11 zmm20b 20 19.6?20.4 5 55 220 1 0.1 2 15 0.03...0.11 zmm22b 22 21.56?22.44 5 55 220 1 0.1 2 16 0.04...0.12 zmm24b 24 23.52?24.48 5 80 220 1 0.1 2 18 0.04...0.12 zmm27b 27 26.46?27.54 5 80 220 1 0.1 2 20 0.04...0.12 zmm30b 30 29.4?30.6 5 80 220 1 0.1 2 22 0.04...0.12 ZMM33B 33 32.34?33.66 5 80 220 1 0.1 2 24 0.04...0.12 zmm36b 36 35.28?36.72 5 80 220 1 0.1 2 27 0.04...0.12 zmm39b 39 38.22?39.78 2.5 90 500 0.5 0.1 5 30 0.04...0.12 zmm43b 43 42.14?43.86 2.5 90 500 0.5 0.1 5 33 0.04...0.12 zmm47b 47 46.06?47.94 2.5 110 600 0.5 0.1 5 36 0.04...0.12 zmm51b 51 49.98?52.02 2.5 125 700 0.5 0.1 10 39 0.04...0.12 zmm56b 56 54.88?57.12 2.5 135 700 0.5 0.1 10 43 0.04...0.12 zmm62b 62 60.76?63.24 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 zmm68b 68 66.64?69.36 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 zmm75b 75 73.5?76.5 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 1) tested with pulses t p = 20 ms. 2) the zmm1b is a silicon diode with operation in forward direction. hence, the index of all parameters should be "f" instead of " z". connect the cathode electrode to the negative pole.
zmm1b...zmm75b 0 0 10 20 vz 4030 zmm36b zmm15b test current iz 5ma 10 20 iz zmm12b breakdown characteristics t j = constant (pulsed) ma 30 0 01 zmm10b 24 3 zmm27b zmm18b zmm22b ZMM33B 57 6 vz tj=25 c zmm... o 810 9 zmm3b3 zmm3b9 test current iz 5ma 20 10 30 breakdown characteristics t j = constant (pulsed) iz 40 50 ma zmm1b o tj=25 c zmm2b7 zmm8b2 zmm5b6 zmm6b8 zmm4b7 zmm... v v
zmm1b...zmm75b 6 100 admissible power dissipation versus ambient temperature valid provided that electrodes are kept at ambient temperature. 2 10 -3 0 -4 10 -5 10 10 -2 10 -1 10 i f 10 1 3 10 ma 0.6 0.40.2 v f 1 v 0.8 tj=25 c tj=100 c o o 0 0 100 100 t amb 200 p tot 300 400 40 3020 010 forward characteristics zmm... 0 2 4 90 70 8060 50 500 mw vz o 200 c v zmm... breakdown characteristics t j = constant (pulsed) test current iz 5ma iz 8 10 ma zmm43b zmm39b zmm51b zmm... tj=25 c o zmm47b
zmm1b...zmm75b 1 t 1 10 s 100v v r =2v 1 10 234 5 3 2 4 5 10 2 vz at iz=5 ma 5 43 v r =1v c tot zmm... pf 3 100 7 2 v r =2v 5 4 1000 7 v r =1v t j =25 c o capacitance versus zener voltage -5 10 10 -4 10 -3 10 -2 -1 t p 10 1 5 0.1 1 2 5 1 2 3 4 10 iz 2 5 2 5 100ma dynamic resistance versus zener current r zj 10 2 4 3 5 100 0.1 2 5 1 o t j =25 c zmm... 10 2 5 iz 2 5 100ma pulse thermal resistance versus pulse duration valid provided that the electrodes are kept at ambient temperature. k/w zmm... r tha 4 0.1 7 3 2 4 5 0.05 0.01 0.02 10 3 2 v=0 t p t v= t p p i 0.5 0.2 10 7 5 2 2 5 4 3 10 7 3 zmm... 2 5 4 3 10 2 3 r zj 100 4 5 2 5 3 4 1000 t j =25 c o dynamic resistance versus zener current 2b7 3b6 4b7 5b1 zmm5b6 33b 27b 15b 12b zmm1b 22b 18b 10b 6b8/8b2 zmm6b2
zmm1b...zmm75b 10 o 10 t j =25 c vz at iz=5 ma iz=5 ma 1 1 2 10 43 5 234 5 100v 1 -5 23 vz at iz=5 ma 5 4 10 3 24 5 100v zmm... 5 t j =25 c 3 2 5 4 10 7 2 dynamic resistance versus zener voltage 100 r zj 5 4 3 7 10 0.1 32 5 4 2 3 5 4 1 iz 24 3 2 10 7 2 5 7 3 4 r zj temperature dependence of zener voltage versus zener voltage o 0 5 10 15 25 20 vz tj mv/k 20ma iz=1ma 5ma zmm... vz tj 10ma 1 1 24 3 5 negative 5 3 2 4 10 2 4 3 2 r zth 10 5 r zth =r tha .vz. 3 2 4 5 100v vz at iz=5 ma 10 24 3 5 positive zmm... dynamic resistance versus zener current 3 thermal differential resistance versus zener voltage valid provided that electrodes are kept at ambient temperature 3 zmm... zmm36b 39b 43b 47b+51b
5.1 0 60 at iz=5 ma -0.2 0 -0.1 20 40 x) c o t j 100 3.6 1 80 120 140 4.7 change of zener voltage versus junction temperature vz 0.3 0.1 0.2 0.4 0.6 0.5 0.8 0.7 v x) vz=35 v 5.6 6.2 5.9 8 7 25 15 10 zmm... 0 10 -0.4 1 2 -0.2 34 5 vz at iz=5 ma 23 5 4 100v 0.6 0.2 0.4 0.8 1.2 1 change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz iz=5 ma 1.6 1.4 v zmm... zmm... 40 40 0 0 20 20 vz tj 60 80 100 100v 60 vz at iz=5 ma 80 iz=5 ma vz temperature dependence of zener voltage versus zener voltage mv/k zmm... 3 0 -1 20 40 60 1 0 2 iz=5 ma 120 t j 100 80 140 o c 6 4 5 7 8 9 36v 43v vz bei iz=5ma 51v change of zener voltage versus junction temperature v vz zmm1b...zmm75b
4 40 0 020 vz 1 2 3 100v 60 vz at iz=5 ma 80 iz=5 ma change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz v 5 zmm... iz=2 ma zmm1b...zmm75b

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